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| SPICE MODELS: MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features NEW PRODUCT * * * * Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Available in Lead Free/RoHS Compliant Version (Note 2) E2 C2 A B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A B C D F M Mechanical Data * * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Also available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 4, on Page 2 Marking Code: C73 (See Page 2) Ordering & Date Code: See Page 2 Terminal Connections: See Diagram Weight: 0.015 grams (approx.) P/N MIMD10A Tr1 Tr2 R1 0.1K 10K R2 10K J K B2 C1 G H 0.65 Nominal H J K L M a D F L All Dimensions in mm Tr2 R1 R 2 R1 Tr1 SCHEMATIC DIAGRAM Maximum Ratings PNP Section Tr1 Characteristic Supply Voltage Input Voltage Output Current @ TA = 25C unless otherwise specified Symbol VCC VIN IO Value -50 -5 to +5 -500 Unit V V mA Maximum Ratings NPN Section Tr2 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 50 50 5 100 Unit V V V mA Maximum Ratings - Total Characteristic Power Dissipation (Note 1) @ TA = 25C unless otherwise specified Symbol Pd Tj, TSTG Value 200 -55 to +150 Unit mW C Operating and Storage Temperature Range Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30381 Rev. 5 - 2 1 of 3 www.diodes.com MIMD10A a Diodes Incorporated Electrical Characteristics PNP Section Tr1 @ TA = 25C unless otherwise specified Min -0.3 3/4 3/4 3/4 3/4 68 3/4 Typ 3/4 3/4 -0.1 3/4 3/4 3/4 200 Max 3/4 -1.5 -0.3 -25 -0.5 3/4 3/4 Unit V V mA mA 3/4 MHz Test Condition VCC = -5V, IO = -100mA VO = 0.3, IO = -100mA IO = -100mA/-5mA VI = -2V VCC = -50V, VI = 0V 3/4 VCE = -10V, IE = -50mA, f = 100MHz NEW PRODUCT Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product* * Transistor - For Reference Only Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Electrical Characteristics NPN Section Tr2 Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Gain-Bandwidth Product* * Transistor - For Reference Only Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Min 50 50 5 3/4 3/4 3/4 100 3/4 @ TA = 25C unless otherwise specified Typ 3/4 3/4 3/4 3/4 3/4 3/4 250 250 Max 3/4 3/4 3/4 0.5 0.5 0.3 600 3/4 Unit V V V mA mA V 3/4 MHz Test Condition IC = 50mA IC = 1mA IE = 50mA VCB = 50V VEB = 4V IC/IB = 10mA / 1.0mA IC = 1mA, VCE = 5V VCE = 10V, IE = -5mA, f = 100MHz Ordering Information Device MIMD10A-7 (Note 3) Packaging SOT-363 Shipping 3000/Tape & Reel Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MIMD10-A-7-F. Marking Information Date Code Key Year Code Month Code Jan 1 2003 P Feb 2 2004 R March 3 2005 S Apr 4 May 5 2006 T Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 Oct O 2010 X Nov N 2011 Y Dec D DS30381 Rev. 5 - 2 2 of 3 www.diodes.com YM C73 C73 = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September MIMD10A TYPICAL CURVES - Tr2 NEW PRODUCT VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) 250 PD, POWER DISSIPATION (MILLIWATTS) (TOTAL PACKAGE) 1 IC/IB = 10 200 0.1 150 75C -25C 25C 100 0.01 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Derating Curve 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC 1000 hFE, DC CURRENT GAIN (NORMALIZED) 75C VCE = 10 4 IE = 0mA COB, CAPACITANCE (pF) -25C 100 25C 3 2 10 1 0 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 75C 0 100 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 VO = 0.2 100 IC, COLLECTOR CURRENT (mA) 25C 10 Vin, INPUT VOLTAGE (V) -25C 1 -25C 75C 25C 1 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30381 Rev. 5 - 2 3 of 3 www.diodes.com MIMD10A |
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